View PHN708_386187.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
PHN708 7 N-channel 80 m FET array enhancement mode MOS transistors
Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
FEATURES * High-speed switching * No secondary breakdown * Very low on-state resistance. APPLICATIONS * Driving high performance three phase brushless DC motors. DESCRIPTION Seven enhancement mode MOS transistors in a 24-pin plastic SOT340-1 (SSOP24) package. Six of the transistors are in three half-bridge configurations. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING - SOT340-1 (SSOP24) PIN 1 and 4 2 3 5 and 8 6 7 9 and 12 10 11 13 14 15, 17, 18, 20, 21, 23, 24 16 19 22 SYMBOL d1 s1 g1 d2 s2 g2 d3 s3 g3 g4 s4 d4 g5 g6 g7
PHN708
DESCRIPTION drain 1 source 1 gate 1 drain 2 source 2 gate 2 drain 3 source 3 gate 3 gate 4 source 4 drain 4 gate 5 gate 6 gate 7
handbook, full pagewidth
d4 13
24
g7
g6
g5
g4
d1
d2
d3
s4
g1 1 12 s1
g2
g3
s2
s3
MAM275
Fig.1 Simplified outline and symbol.
1998 Mar 17
2
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
QUICK REFERENCE DATA SYMBOL VDS VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = 1 mA; VDS = VGS Ts = 80 C ID = 1.5 A; VGS = 10 V Ts = 80 C CONDITIONS - - 1 - - - MIN.
PHN708
MAX. 30 20 2.8 3.1 80 1.3 V V V A
UNIT
m W
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per FET VDS VGS ID IDM Ptot drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation Ts = 80 C; note 1 note 2 Ts = 80 C; note 3 Ts = 80 C; note 4 Ts = 80 C; note 5 Ts = 80 C; note 6 Tstg Tj IS ISM Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. When only one FET dissipates. 4. When either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power. 5. When FET four plus either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power. 6. When all seven FETs dissipate an equal amount of power. storage temperature operating junction temperature Ts = 80 C note 2 - - - - - - - - -55 -55 - - 30 20 3.1 12.4 1.3 1.13 0.92 0.77 +150 +150 V V A A W W W W C C PARAMETER CONDITIONS MIN. MAX. UNIT
Source-drain diode source current (DC) peak source current 1.3 5.2 A A
1998 Mar 17
3
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
PHN708
handbook, halfpage
2
MDA787
Ptot (W)
10 2 handbook, halfpage ID (A) 10 (1)
MDA788
1.6
tp = 100 s 1 ms
1.2 1 0.8
1
10 ms P
= T
tp DC 100 ms
0.4
10
tp T 0 0 50 100 150 Ts (C) 200 10
2 1
t
10
1
10
VDS (V)
10 2
= 0.01; Ts = 80 C. (1) RDSon limitation.
Fig.2 Power derating curve.
Fig.3 SOAR.
THERMAL CHARACTERISTICS SYMBOL Per FET Rth j-s thermal resistance from junction to soldering point note 1 note 2 note 3 note 4 Notes 1. When only one FET dissipates. 2. When either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power. 3. When FET four plus either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power. 4. When all seven FETs dissipate an equal amount of power. 53 62 76 91 K/W K/W K/W K/W PARAMETER CONDITIONS VALUE UNIT
1998 Mar 17
4
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per FET V(BR)DSS VGSth IDSS IGSS RDSon Ciss Coss Crss QG QGS QGD td(on) tf ton td(off) tr toff drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge VGS = 0; ID = 10 A VGS = VDS ; ID = 1 mA VGS = 0; VDS = 24 V VGS = 20 V; VDS = 0 VGS = 4.5 V; ID = 0.75 A VGS = 10 V; ID = 1.5 A VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = 24 V; f = 1 MHz VGS = 10 V; VDD = 15 V; ID = 1 A VDD = 15 V; ID = 1 A VDD = 15 V; ID = 1 A VGS = 0 to 10 V; VDD = 20 V; ID = 1 A; Rgen = 6 VGS = 0 to 10 V; VDD = 20 V; ID = 1 A; Rgen = 6 VGS = 0 to 10 V; VDD = 20 V; ID = 1 A; Rgen = 6 VGS = 10 to 0 V; VDD = 20 V; ID = 1 A; Rgen = 6 VGS = 10 to 0 V; VDD = 20 V; ID = 1 A; Rgen = 6 VGS = 10 to 0 V; VDD = 20 V; ID = 1 A; Rgen = 6 VGD = 0; IS = 1.25 A IS = 1.25 A; di/dt = -100 A/s 30 1 - - - - - - - - - - - - - - - - - - - - - - 180 70 36 5.4 0.4 1.6 PARAMETER CONDITIONS MIN. TYP.
PHN708
MAX. - 2.8 100 100 130 80 - - - 8 - - - - 10 - - 25
UNIT
V V nA nA m m pF pF pF nC nC nC
Switching times turn-on delay time fall time turn-on switching time turn-off delay time rise time turn-off switching time 3 2.5 5.5 10 6 16 ns ns ns ns ns ns
Source-drain diode VSD trr source-drain diode forward voltage reverse recovery time - - - 25 1 - V ns
1998 Mar 17
5
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
PHN708
handbook, full pagewidth
VDD Vin RL Vout 0
90 %
10 %
90 % Vin Vout 10 % 0 td(on) tf
MAM274
td(off) tr toff
ton
Fig.4 Switching times test circuit with input and output waveforms.
102 handbook, full pagewidth Rth j-s (K/W)
MDA786
= 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02
10
1 0.01
P
= T
tp
0 10-1 10-6
tp T 10-4 10-3 10-2 10-1
t
10-5
tp (s)
1
Fig.5 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1998 Mar 17
6
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
PHN708
handbook, halfpage
10
MDA792
VGS (V) 8
handbook, halfpage
16
MDA790
ID (A) 12
(1) (2) (3)
(4)
6 8 4
(5)
(6)
4 2
(7)
(8) (9)
0 0 2 4 QG (nC) 6
0 0 2 4 6 8 10 VDS (V)
Tamb = 25 C; tp = 80 s; = 0. (1) (2) (3) (4) VGS = 10 V. VGS = 7.5 V. VGS = 6 V. VGS = 5 V.
VDD = 15 V; ID = 1 A; Tamb = 25 C.
(5) (6) (7) (8) (9)
VGS = 4.5 V. VGS = 4 V. VGS = 3.5 V. VGS = 3 V. VGS = 2.5 V.
Fig.6
Gate-source voltage as a function of total gate charge; typical values.
Fig.7
Output characteristics; typical values.
handbook, halfpage
16
MDA791
handbook, halfpage
400
MDA789
ID (A) 12
C (pF) 300
8
200
Ciss
4
100
Coss Crss
0 0 2 4 VGS (V) 6
0 0 5 10 15 20 25 VDS (V)
VGS = 0 ; f = 1 MHz; Tj = 25 C. VDS = 10 V; Tamb = 25 C; tp = 80 s; = 0.
Fig.9 Fig.8 Transfer characteristic; typical values.
Capacitance as a function of drain-source voltage; typical values.
1998 Mar 17
7
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
PHN708
handbook, halfpage
8
MDA793
handbook, halfpage
10
MDA794
IS (A) 6
(1) (2) (3)
RDSon () 1
(1)(2)(3)(4)(5)(6)(7)(8)
4 10-1 2
0 0 0.4 0.8 VSD (V) 1.2
10-2
0
2
4
6
8
10 VGS (V)
Tamb = 25 C; tp = 300 s; = 0. tp = 300 s; = 0. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -65 C. (1) (2) (3) (4) ID = 0.3 A. ID = 0.75 A. ID = 1.5 A. ID = 3.1 A. (5) ID = 5 A. (6) ID = 7.5 A. (7) ID = 10 A. (8) ID = 12.4 A.
Fig.10 Source current as a function of source-drain diode forward voltage; typical values.
Fig.11 Drain-source on-state resistance as a function of gate-source voltage; typical values.
1998 Mar 17
8
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
PHN708
handbook, halfpage
1.2
MDA795
handbook, halfpage
1.8 k
MDA796
k
(1)
1
1.4
(2)
0.8
1
0.6 -75
-25
25
75
125
175 Tj (C)
0.6 -75
-25
25
75
125
175 Tj (C)
R DSon at T j k = ---------------------------------------R DSon at 25 C V GSth at T j k = ------------------------------------V GSth at 25C VGSth at VDS = VGS; ID = 1 mA. RDSon at: (1) VGS = 10 V; ID = 1.5 A. (2) VGS = 4.5 V; ID = 0.75 A.
Fig.12 Temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values.
Fig.13 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values.
1998 Mar 17
9
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
PACKAGE OUTLINE SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm
PHN708
SOT340-1
D
E
A X
c y HE vMA
Z 24 13
Q A2 pin 1 index A1 (A 3) Lp L 1 e bp 12 wM detail X A
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.0 A1 0.21 0.05 A2 1.80 1.65 A3 0.25 bp 0.38 0.25 c 0.20 0.09 D (1) 8.4 8.0 E (1) 5.4 5.2 e 0.65 HE 7.9 7.6 L 1.25 Lp 1.03 0.63 Q 0.9 0.7 v 0.2 w 0.13 y 0.1 Z (1) 0.8 0.4 8 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT340-1 REFERENCES IEC JEDEC MO-150AG EIAJ EUROPEAN PROJECTION
ISSUE DATE 93-09-08 95-02-04
1998 Mar 17
10
Philips Semiconductors
Product specification
7 N-channel 80 m FET array enhancement mode MOS transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PHN708
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Mar 17
11
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135108/00/03/pp12
Date of release: 1998 Mar 17
Document order number:
9397 750 03274

▲Up To Search▲

Price & Availability of PHN708

	To Download PHN708 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .